STC03DE170中文资料.docx

STC03DE170中文资料1/9October 2021Table 1: General Featuresn LOW EQUIVALENT ON RESISTANCE n VERY FAST-SWITCH, UP TO 150 kHz n SQUARED RBSOA, UP TO 1700 VnVERY LOW C ISS DRIVEN BY RG = 4.7 WAPPLICATION n AUX SMPS FOR THREE PHASE MAINSDESCRIPTIONThe STC03DE170 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology.The STC03DE170 is designed for use in aux flyback smps for any three phase application.Table 2: Order CodeV CS(ON)I C R CS(ON)1 V1.8 A0.55 WPart Number Marking Package Packaging STC03DE170STC03DE170TO247-4LTUBESTC03DE170HYBRID EMITTER SWITCHED BIPOLAR TRANSISTORESBT? 1700 V - 3 A - 0.55 W Rev. 2STC03DE1702/9Table 3: Absolute Maximum RatingsTable 4: Thermal DataTable 5: Electrical Characteristics (T case = 25 o C unless otherwise specified)Symbol ParameterValue Unit V CS(SS)Collector-Source Voltage (V BS = V GS = 0 V)1700V V BS(OS)Base-Source Voltage (I C = 0, V GS = 0 V)30V V SB(OS)Source-Base Voltage (I C = 0, V GS = 0 V)9V V GS Gate-Source Voltage 20V I C Collector Current3A I CM Collector Peak Current (t p 2A I BM Base Peak Current (t p -65 to 125C T JMax. Operating Junction Temperature125CSymbol ParameterUnitR thj-caseThermal Resistance Junction-Case Max1oC/WSymbol ParameterTest ConditionsMin.Typ.Max.Unit I CS(SS)Collector-Source Current (V BS = V GS = 0 V)V CS(SS) = 1700 V 100m A I BS(OS)Base-Source Current (I C = 0 , V GS = 0 V)V BS(OS) = 30 V10m AI SB(OS)Source-Base Current (I C = 0 , V GS = 0 V)V SB(OS) = 9 V100m AI GS(OS)Gate-Source Leakage V GS = 20 V500nA V CS(ON)Collector-Source ONVoltage V GS = 10 V I C = 1.8 A I B = 0.36 A V GS = 10 V I C = 0.7 A I B = 70 mA 11 1.51.3V Vh FEDC Current GainI C = 1.8 A V CS = 1 V V GS = 10 V I C = 0.7 A V CS = 1 V V GS = 10 V3.56510V BS(ON)Base-Source ON Voltage V GS = 10 V I C = 1.8 A I B = 0.36 A V GS = 10 V I C = 0.7 A I B = 70 mA 10.8 1.21V V V GS(th)Gate Threshold Voltage V BS = V GS I B = 250 m A 1.5 2.23V C issInput CapacitanceV CS = 25 V f = 1MHZ V GS = V CB = 0750pFQ GS(tot)Gate-Source ChargeV CS = 15 V V GS = 10 V V CB = 0 I C = 1.8 A 12.5nCt s t fINDUCTIVE LOAD Storage Time Fall TimeV GS = 10 VR G = 47 W V Clamp = 1200 V t p = 4 m s I C = 1.8 A I B = 0.36 A76014ns nsSTC03DE1703/9t s t f INDUCTIVE LOAD Storage Time Fall TimeV GS = 10 VR G = 47 W V Clamp = 1200 V t p = 4 m s I C = 0.7 A I B = 70 mA69032ns ns V CSWMaximum Collector-Source Voltage without SnubberR G = 47 W h FE = 5 A I C = 3 A 1500V V CS(dyn)Collector-Source Dynamic Voltage(500 ns)V CC = V Clamp = 400 V V GS = 10 VR G = 47 W I C = 0.5 AI B = 0.1 A I Bpeak = 1 At peak = 500 ns3.9VV CS(dyn)Collector-Source Dynamic Voltage(1m s)V CC = V Clamp = 400 V V GS = 10 VR G = 47 W I C = 0.5 AI B = 0.1 A I Bpeak = 1 At peak = 500 ns2.2VSymbol ParameterTest ConditionsMin.Typ.Max.UnitSTC03DE1704/9Figure 3: Safe Operating AreaFigure 4: Reverse Biased Safe Operating AreaFigure 5: DC Current Gain Figure 6: Output CharacteristicsFigure 7: Gate Threshold Voltage vs Tempera-tureFigure 8: DC Current GainSTC03DE1705/9Figure 9: Collector-Source On VoltageFigure 10: Base-Source On Voltage Figure 11: Inductive Load Switching Time Figure 12: Collector-Source On VoltageFigure 13: Base-Source On VoltageFigure 14: Inductive Load Switching TimeSTC03DE1706/9Figure 15: Dynamic Collector-Emitter Satura-tion VoltageFigure 16: Inductive Load Enlargement FBSOA CircuitTable 6: Components, ValuesV B1 = 4.16 V D 1 = BA157R 1 = 1 W R 2 = 100 W R 3 = V CC / I Cn R g = 47 WC 1 = 220 nF C 2 70 pF C 3 = 50 nF V g = 10 V Pulse Time = 5 m s7/9STC03DE170Table 7: Revision HistoryDate Release Change Designator 13-Sep-20211First Release.04-Oct-20212Figure 15 has been updated on page 6.8/9STC03DE170 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronicsAll other names are the property of their respective owners? 2021 STMicroelectronics - All Rights ReservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of Americahttp:/www.wendangku.net/doc/9779236f1ed9ad51f01df25c.html9/9